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Cascaded Op Amps01:16

Cascaded Op Amps

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Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
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MOSFET Amplifiers01:17

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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BJT Amplifiers01:14

BJT Amplifiers

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Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
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Small-Signal Analysis of MOSFET Amplifiers01:23

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
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Configurations of BJT01:16

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Bipolar Junction Transistors (BJTs) are categorized into various types based on their configurations, each with distinct characteristics and applications. The configurations are primarily differentiated by which terminal—base, emitter, or collector—is common to both the input and output circuits.
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A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner.

Javier Del Pino1, Sunil Lalchand Khemchandani1, Daniel Mayor-Duarte2

  • 1Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35017 Las Palmas de Gran Canaria, Spain.

Sensors (Basel, Switzerland)
|July 29, 2023
PubMed
Summary

This study presents a Gallium Nitride on Silicon (GaN-on-Si) high-power amplifier (HPA) for Ku-band active radar. The GaN-on-Si Solid-State Power Amplifier (SSPA) achieves high output power, demonstrating its suitability for radar applications.

Keywords:
GaN on silicon (GaN-on-Si)Ku bandgallium nitride (GaN)high-power amplifier (HPA)

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Area of Science:

  • Microwave Engineering
  • Semiconductor Devices
  • Radar Technology

Background:

  • Active radar systems require high-power amplifiers (HPAs) operating efficiently at Ku-band frequencies.
  • Gallium Nitride on Silicon (GaN-on-Si) technology offers promising characteristics for high-power microwave applications.

Purpose of the Study:

  • To design and characterize a Ku-band MMIC HPA for active radar applications using GaN-on-Si technology.
  • To investigate a three-stage amplifier architecture and optimize performance through design modifications.

Main Methods:

  • A three-stage MMIC HPA was designed and fabricated using OMMIC foundry's D01GH technology.
  • Stability and thermal analyses were performed, and an asymmetry was introduced at the output combiner for performance optimization.

Main Results:

  • The HPA achieved a 39.5 dBm pulsed-mode output power and a 23 dB peak linear gain.
  • A drain efficiency of 27% and good input/output matching were obtained in the 16-19 GHz range.
  • The fabricated chip measured 5 × 3.5 mm².

Conclusions:

  • GaN-on-Si-based SSPAs are suitable for implementing high-performance Ku-band active radars.
  • The presented MMIC HPA design demonstrates significant potential for radar systems requiring high power and efficiency.