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Self-powered and broadband CuSCN/Si heterojunction photodetector for multi-color imaging based on diffuse reflection
Yujin Liu1, Yilong Meng2, Junqing Liu2
1Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, People's Republic of China.
Nanotechnology
|August 8, 2023
Summary
We developed a novel copper thiocyanate/silicon (CuSCN/Si) heterojunction photodetector (PD) with broadband detection from UV to infrared. This high-performance PD offers excellent sensitivity and a wide dynamic range for imaging applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Devices
Background:
- Copper thiocyanate (CuSCN) is utilized in photodetectors (PDs).
- Existing CuSCN-based PDs have limitations in operating wavelength range and photodetection performance.
Purpose of the Study:
- To fabricate a high-performance CuSCN/Si heterojunction photodetector (PD).
- To achieve broadband photodetection and excellent performance characteristics.
Main Methods:
- Fabrication of CuSCN/Si heterojunction PD using low-temperature solution spin-coating.
- Characterization of PD performance including spectral response, detectivity, responsivity, linear dynamic range, and response time.
Main Results:
- Broadband spectral response covering ultraviolet-visible-infrared range.
- High detectivity (2.26 × 1012 Jones) due to ultralow dark current (23 pA).
- High linear dynamic range (122 dB) and fast response time (25/150 μs).
- Demonstration of multi-color imaging capabilities.
Conclusions:
- The CuSCN/Si PD exhibits excellent broadband photodetection performance.
- The fabricated PD shows significant potential for low-cost, non-toxic, and high-performance applications in imaging.
