Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Anion-Swapped Antiperovskite X<sub>3</sub>AB: Stability Evaluation and Photovoltaic Potential From First-Principles Study.

ChemSusChem·2026
Same author

Seeded Solid-Phase Epitaxy of Wafer-Scale 2H-MoTe<sub>2</sub> Single-Crystal Arrays through Spatially Confined Single Nucleation.

ACS nano·2025
Same author

11-bit two-dimensional floating-gate memories.

Nature communications·2025
Same author

Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic.

Nano letters·2025
Same author

Enhanced Giant Ferroelectric Tunneling Electroresistance in 2D Ruddlesden-Popper Oxides.

ACS nano·2025
Same author

Universal Centimeter-Scale van der Waals Epitaxy of Ultrathin Single-Crystalline Ferrites Films.

Advanced materials (Deerfield Beach, Fla.)·2025
Same journal

Ordered Polar Topological Domains Enabling Giant Second-Harmonic Generation in Ferroelectric Nematic Liquid Crystals.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Dual-Functional Alumina Additive Enabling Efficient, Volumetric Mechanoluminescence for Nighttime Safety Footwear.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Phase Transformation Accompanied by Evolution of Internal Stress and the Coupling Mechanism of Chemical-Mechanical Degradation in Single-Crystal NiRich Cathodes.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Zwitterionic Polymer Electrolytes With Dipole-Rotation-Assisted Ion Conduction for Solid Lithium Metal Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

3D-Printed Ultra-Thin Solid Polymer Electrolytes with Superior Dielectric Properties for Wide Temperature Range All-Solid-State Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Electrostatic Potential Tuning by Low-Volatility Halogenated Additive: Boosting PTQ10-Based Binary OPV to Near 20% Efficiency with High Scalability.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Jul 16, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing.

Lei Yin1, Ruiqing Cheng1,2, Shurong Pan1

  • 1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.

Advanced Materials (Deerfield Beach, Fla.)
|September 9, 2023
PubMed
Summary
This summary is machine-generated.

Researchers achieved atomic-scale patterning in superionic cuprous telluride, enabling controllable multilevel and bipolar switching for advanced image enhancement applications using memristors.

Keywords:
2D crystalsatomic-scale patterningcuprous tellurideimage processingresistive switching

More Related Videos

Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.9K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K

Related Experiment Videos

Last Updated: Jul 16, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K
Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.9K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) layered materials offer efficient property control via defects, surface modification, and electric fields.
  • Patterning designs like moiré superlattices and periodic dielectrics precisely control atomic and electronic environments at scale.
  • This enables tailored material properties and device functionality.

Purpose of the Study:

  • To report scalable atomic-scale patterning in superionic cuprous telluride.
  • To achieve controllable multilevel and bipolar switching phenomena.
  • To demonstrate the application of these devices in image enhancement.

Main Methods:

  • Utilizing bonding differences at nonequivalent copper sites for atomic-scale patterning.
  • Leveraging the natural coupling of ordered and disordered sublattices in cuprous telluride.
  • Designing crystal structure and electrical contacts for specific switching behaviors.

Main Results:

  • Demonstrated scalable atomic-scale patterning in superionic cuprous telluride.
  • Achieved controllable piezoelectricity-like multilevel switching and bipolar switching.
  • Successfully applied these switching characteristics in image enhancement.

Conclusions:

  • Extended the class of patternable crystals and atomic switching devices.
  • Introduced a new frontier for image processing using memristors.
  • Highlighted the potential of engineered 2D materials for advanced electronic applications.