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Updated: Jul 15, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Mechanisms of point defect formation and ionic conduction in divalent cation-doped lanthanum oxybromide:
Kazuki Shitara1,2, Akihide Kuwabara1, Naoyoshi Nunotani3
1Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Nagoya, Aichi 456-8587, Japan. kazuki_shitara@jfcc.or.jp.
Abstract:
The ionic conduction mechanism in M2+-doped (M: Mg, Ca, Zn, and Sr) lanthanum oxybromide (LaOBr) was investigated theoretically and experimentally. Formation energy calculations of point defects revealed that Br- ion vacancies and substitutional M2+ ions were the major point defects in M2+-doped LaOBr, while Br- ion vacancies and antisite O2- ions at Br sites were the major defect types in pure LaOBr. In the relaxed point defect models, doped Mg2+ and Zn2+ ions were displaced from the initial positions of the La3+ ions, and this was experimentally supported by crystal structural analysis. These significant atomic shifts were probably due to the strong interactions between Br- and the dopant ions. First-principles calculations and experimental analyses using X-ray photoelectron spectroscopy and X-ray absorption fine-structure spectroscopy also suggested the existence of strong interactions. The migration energy of Br- ions was calculated to be 0.53 eV, while the migration energy of O2- ions was 0.92 eV, implying that Br- ion migration via a vacancy system was more probable than O2- ion migration. The calculated association energies between MLa and VBr were 0.4-0.6 eV, suggesting that the association needed to be disrupted for Br- ion conduction. The sum of the association and migration energies was comparable to the experimental association energies of M2+-doped LaOBr.
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