Two-dimensional HfS₂-ZrS₂ lateral heterojunction FETs with high rectification and photocurrent

Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS₂-ZrS₂ lateral heterojunction. It possesses simultaneous and obvious rectifying behavior and photodetection characteristics in the visible light region, such as the rectification ratio of ∼10¹², photocurrent density of 13.3 nA m^-1, responsivity of 57 mA W^-1, and extinction ratio of 108. Notably, the rectification ratio of the single-gate FET is larger than that of the dual-gate FET under the negative gate voltage. These results indicate that monolayer lateral heterojunction-based FETs can provide an effective route to integrate rectifying and photodetection functions in single optoelectronic nanodevices.