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Updated: Jul 11, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Kieran P Hiller1, Aimo Winkelmann1,2, Ben Hourahine1
1Advanced Materials Diffraction Lab, Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK.
New electron backscatter diffraction (EBSD) imaging techniques, virtual diode (VD) and center of mass (COM), effectively visualize threading dislocations and surface steps in nitride thin films. These methods offer improved signal-to-noise for enhanced optoelectronic device analysis.
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