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Related Experiment Video

Updated: Jul 6, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Sub-1-Volt Electrically Programmable Optical Modulator Based on Active Tamm Plasmon.

Joo Hwan Ko1, Dong Hyun Seo1, Hyeon-Ho Jeong1,2

  • 1School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|January 4, 2024
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel optical modulator using Tamm plasmons and PEDOT:PSS. This device achieves high modulation depth in the near-infrared range with low voltage, enabling advanced optical interconnects and memory.

Keywords:
Tamm plasmonelectrically switchablephotonics crystalpoly (3,4‐ethylene‐dioxythiophene):polystyrene sulfonatereconfigurable photonics

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Reconfigurable optical devices are crucial for high-density optical interconnects and photonic switching.
  • Achieving high modulation depth with low voltage in the near-infrared (NIR) range remains a challenge for optical modulators.
  • The NIR range is vital for free-space communication and imaging.

Purpose of the Study:

  • To introduce an electrically switchable Tamm plasmon device coupled with PEDOT:PSS for high-performance optical modulation.
  • To demonstrate high modulation depth across the entire NIR range using low, CMOS-compatible voltages.
  • To explore the device's potential for non-volatile optical memory and neuromorphic applications.

Main Methods:

  • Integration of electrically switchable Tamm plasmons with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS).
  • Utilizing electrochemical doping/dedoping to precisely control charge carrier density.
  • Characterization of optical modulation depth and voltage requirements across the NIR spectrum.

Main Results:

  • Achieved optical modulation exceeding 88% with a low CMOS-compatible voltage of ±1 V.
  • Demonstrated high modulation depth across the entire NIR range by enabling full light absorption under epsilon near zero conditions.
  • Showcased rewritable optical memory storage with long-term potentiation/depression properties.

Conclusions:

  • The developed Tamm plasmon-PEDOT:PSS device offers a promising solution for efficient optical modulation in the NIR range.
  • The device's low operating voltage and high modulation depth are suitable for advanced optical interconnects and communication.
  • The device exhibits potential for non-volatile optical memory and neuromorphic computing applications.