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Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)1.17(NbS2)3
Shengyao Li1, Xueyan Wang1, Zherui Yang1
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
ACS Applied Materials & Interfaces
|February 13, 2024
Summary
Researchers discovered a giant third-order nonlinear Hall effect (THE) in a novel material, (SnS)1.17(NbS2)3. This effect, driven by band geometry, emerges due to interface engineering and symmetry breaking, offering potential for advanced electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The nonlinear Hall effect (NLHE) is crucial for understanding band geometry and current rectification.
- Third-order nonlinear Hall effect (THE) is governed by the Berry Connection Polarizability tensor.
- THE is typically prohibited in materials like NbS2 and SnS due to crystal symmetry.
Purpose of the Study:
- To demonstrate and investigate a giant third-order nonlinear Hall effect (THE) in a misfit layer compound.
- To explore the role of interface engineering and symmetry breaking in inducing THE.
- To correlate the observed THE with band geometry modulation.
Main Methods:
- Fabrication of a superlattice compound (SnS)1.17(NbS2)3 by introducing a SnS monolayer.
- Experimental measurement of angular-dependent third-order nonlinear Hall effect.
- Analysis of scaling relationships to understand the underlying physics.
Main Results:
- A giant third-order nonlinear Hall effect was observed in (SnS)1.17(NbS2)3, orders of magnitude stronger than previously reported.
- THE emerged in the superlattice despite being prohibited in individual constituent layers.
- Observed THE correlated with band geometry modulation and symmetry breaking induced by the interface.
Conclusions:
- Interface engineering in misfit layer compounds can induce and enhance novel quantum phenomena like THE.
- The study highlights the potential of modulating structural and electronic geometries for discovering new quantum effects.
- The findings open avenues for applications in advanced electronic devices and fundamental physics research.

