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Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling.

Luc M van der Krabben¹, Natasha Gruginskie¹, Maarten van Eerden¹

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ACS Applied Electronic Materials

|March 4, 2024

Summary

Researchers developed a new Gallium Arsenide (GaAs) light-emitting diode (LED) design to reduce energy loss from surface recombination. This innovative approach enhances internal quantum efficiency, crucial for electroluminescent cooling applications.

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Development of Efficient OLEDs from Solution Deposition

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

III-V semiconductor light-emitting diodes (LEDs) are key for electroluminescent cooling.
Achieving high internal quantum efficiency (IQE) is essential for effective cooling.
Nonradiative surface recombination at the device perimeter limits IQE in GaAs-based LEDs.

Purpose of the Study:

To present an unconventional LED design to mitigate perimeter recombination losses.
To enhance internal quantum efficiency in GaAs/InGaP double heterojunction LEDs.
To improve the potential for electroluminescent cooling in semiconductor devices.

Main Methods:

Fabrication of p-i-n GaAs/InGaP double heterojunction LEDs with varied sizes and perimeter extensions.
Systematic variation of the distance between the current injection area and the device perimeter.
Utilizing a Photon Dynamics model to estimate internal quantum efficiency changes.

Main Results:

A 19% relative increase in external quantum efficiency (EQE) was achieved by extending the perimeter-to-contact distance.
An estimated 5% relative increase in internal quantum efficiency (IQE) due to reduced perimeter recombination.
The design successfully reduced perimeter recombination without compromising maximum current density.

Conclusions:

Extending the perimeter-to-contact distance is an effective strategy to reduce nonradiative recombination.
This method enhances IQE and EQE, advancing electroluminescent cooling in LEDs.
The findings are applicable to other semiconductor devices limited by perimeter recombination.