Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Resistive switching devices are crucial for next-generation electronics.
• Accurate thermal modeling is essential for device performance and reliability.
• Current methods for thermal resistance extraction in these devices are often indirect.

Purpose of the Study:

• To develop and validate a novel technique for extracting thermal resistance in resistive switching devices.
• To correlate electrical and thermal behaviors using in-operando measurements.
• To enhance compact models for circuit simulations by incorporating accurate thermal parameters.

Main Methods:

• Fabrication of Au/Ti/TiO2/Au resistive switching devices.
• Simultaneous electrical characterization (I-V curves) and scanning thermal microscopy for hot spot analysis.
• Development of a COMSOL Multiphysics simulation model for temperature mapping.
• Automatic numerical methods for calculating set/reset voltages and series resistance.

Main Results:

• Direct correlation established between electrical and thermal responses.
• Accurate thermal resistance values extracted using combined electrical and thermal measurements.
• Device variability assessed through automated analysis of switching parameters.
• Enhanced compact model incorporating experimental thermal resistance and series resistance.

Conclusions:

• The presented technique offers a more direct and reliable method for thermal resistance extraction compared to traditional fitting methods.
• The findings contribute to more accurate circuit simulations and improved design of resistive switching memory devices.
• Simultaneous electrical-thermal analysis provides deeper insights into device physics and failure mechanisms.