Multi-Stimuli Operando Transmission Electron Microscopy for Two-Terminal Oxide-Based Devices.

Area of Science:

• Materials Science
• Nanoscience
• Electrical Engineering

Background:

• In situ transmission electron microscopy (TEM) with microelectromechanical systems (MEMS) chips offers advanced nanoelectronic device analysis.
• Controlling multiple stimuli within a TEM environment for device operation is a significant challenge.

Purpose of the Study:

• To investigate the impact of multi-stimuli application on the electrical performance of TEM lamella devices.
• To develop and validate a technique for approximating macroscale leakage current measurements in TEM lamellae.

Main Methods:

• Integration of MEMS-based chips with in situ TEM gas cells for biasing experiments.
• Development of a post-focused ion beam (FIB) healing technique for leakage current approximation.
• Exposure of SrTiO3-based memristors and BaSrTiO3-based tunable capacitors to ion and electron bombardment in oxygen-rich environments.

Main Results:

• A reoxidation process was observed in SrTiO3 and BaSrTiO3 devices.
• Ion and electron bombardment in oxygen-rich environments led to a decrease in leakage current.
• Successful demonstration of multi-stimuli TEM experiments on metal-insulator-metal devices.

Conclusions:

• The developed technique enables in situ electrical characterization of nanoelectronic devices under various stimuli.
• Reoxidation is a key factor influencing leakage current in these materials under specific bombardment conditions.
• This work paves the way for advanced multi-stimuli TEM studies of complex electronic devices.