Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Conventional dynamic random-access memory (DRAM) scaling is reaching physical limits.
• 3D DRAM architectures are proposed as a next-generation solution.
• Silicon integration in 3D DRAM presents challenges in cost-effective transistor performance.

Purpose of the Study:

• To provide an overview of proposed 3D DRAM structures.
• To compare oxide semiconductors (OSs) and metal dichalcogenides (TMDs) for 3D DRAM.
• To discuss the feasibility of OSs and TMDs as channel materials for 3D DRAM.

Main Methods:

• Literature review of 3D DRAM structures.
• Comparative analysis of OS and TMD material characteristics.
• Assessment of recent progress in OS-based 3D DRAM.

Main Results:

• OSs and TMDs are viable alternatives to silicon for 3D DRAM.
• Specific material properties of OSs and TMDs are evaluated for channel applications.
• Recent advancements highlight the potential of OSs in overcoming silicon-based limitations.

Conclusions:

• OSs and TMDs offer promising pathways for next-generation 3D DRAM.
• These materials can potentially address the performance and cost challenges of silicon-based 3D DRAM.
• Further research into OSs is crucial for realizing advanced 3D DRAM technology.