Low-Temperature Synthesis of WSe₂ by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible...

Area of Science:

• Materials Science
• Nanotechnology
• Electronics Engineering

Background:

• Low-temperature growth of 2D transition-metal dichalcogenides (TMDs) is crucial for integrating them with silicon chips.
• Enabling integration below back-end-of-line (BEOL) processing temperatures allows for high-density heterogeneous circuits.

Purpose of the Study:

• To present a low-temperature synthesis method for 2D tungsten diselenide (WSe2).
• To demonstrate the utility of WSe2 in fabricating memristors for novel neuron circuits.

Main Methods:

• Synthesis of 2D WSe2 via selenization of a tungsten (W) film at 400 °C under ultrahigh vacuum (UHV) conditions.
• Characterization using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), transmission electron microscopy (TEM), and spectroscopy.

Main Results:

• Achieved large-area, homogeneous 2D WSe2 films at a low temperature of 400 °C.
• Successfully fabricated memristors using the synthesized WSe2.
• Demonstrated a compact neuron circuit utilizing the WSe2 memristors, capable of reconfiguration for homeostasis.

Conclusions:

• The developed low-temperature UHV selenization process is effective for large-area, homogeneous 2D WSe2 growth.
• The WSe2-based memristors are suitable for creating advanced neuromorphic computing circuits.
• This method facilitates the integration of 2D materials with silicon for next-generation electronic devices.