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Updated: Jun 27, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing
Manh-Cuong Nguyen1, Jiwon You2, Yonguk Sim3
1Department of Materials Science and Engineering 3-D Convergence Center, Inha University, Incheon 22212, Korea. rino.choi@inha.ac.kr.
Abstract:
We experimentally demonstrate the concept of combination-encoding content-addressable memory (CECAM) that offers much higher content density than any other content-addressable memory devices proposed to date. In this work, CECAM was fabricated and validated with a hafnium-zirconium oxide (HZO) ferroelectric tunnel junction (FTJ) crossbar array. The new CAM structure, which utilizes nonvolatile memory devices, offers numerous advantages including low-current operation (FTJ), standby power reduction (ferroelectric HZO), and increased content density. Multibit data are encoded and stored in multi-switch CECAM. Perfect-match searching in CECAM with a reasonable match current (lower than nA) for different sizes of CECAM has been validated from a novel CAM device. We demonstrate N-CECAM (with keys encoded into 2N-long binary arrays) for N = 3 (using 6 FTJs) and 4 (using 8 FTJs), leading to content densities of 0.667 and 0.75 bits per switch, which highlight 33% and 50% increase in content density compared to that of the conventional TCAM (0.5 bits per switch).
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