High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

Area of Science:

• Materials Science
• Condensed Matter Physics
• Semiconductor Device Physics

Background:

• Two-dimensional (2D) materials are critical for designing advanced metal oxide semiconductor field-effect transistors (MOSFETs).
• Key properties for MOSFET channel materials include a small carrier effective mass and an appropriate band gap.
• Exploring novel 2D materials is essential for next-generation electronic devices.

Purpose of the Study:

• To investigate the quantum transport properties of stable two-dimensional antimony selenobromide (SbSeBr).
• To evaluate SbSeBr as a potential channel material for high-performance field-effect transistors (FETs).
• To understand the influence of band structure on transport characteristics in SbSeBr FETs.

Main Methods:

• First-principles calculations were employed to simulate the quantum transport properties of 2D SbSeBr.
• The electronic band structure and effective mass of electrons were calculated.
• Performance metrics for an 8 nm channel length SbSeBr FET were simulated, including on-state current, power consumption, and delay time.

Main Results:

• Monolayer SbSeBr exhibits a suitable band gap of 1.18 eV and a small electron effective mass (m*e) of 0.22m0.
• Simulated SbSeBr FETs demonstrated a high on-state current (1869 μA/μm), low power consumption (0.080 fJ/μm), and minimal delay time (0.062 ps).
• Asymmetrical band trends in SbSeBr lead to anisotropic transport behavior, despite an isotropic electron effective mass.

Conclusions:

• Monolayer SbSeBr is a competitive channel material for high-performance FETs, meeting International Technology Roadmap for Semiconductors requirements.
• The study highlights the significance of band trends in determining transport orientation in 2D materials.
• SbSeBr offers valuable insights for the selection and design of novel channel materials for advanced semiconductor applications.