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Updated: Jun 25, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS2/WSe2/MoS2 Heterostructure

Zezhang Yan1, Ningsheng Xu1, Shaozhi Deng1

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

Nanomaterials (Basel, Switzerland)
|May 24, 2024
PubMed

Keywords:
AC characteristicsbipolar junction transistortwo-dimensional materialvan der Waalsvertically stacked

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