A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Optoelectronic resistive random-access memory (RRAM) offers integrated perception, storage, and randomness for in-sensor image cryptography.
• Current methods face challenges in real-time, hardware-level security for image data.

Purpose of the Study:

• To develop 2D hexagonal boron nitride (h-BN) based optoelectronic RRAM for simultaneous color image capture and physically unclonable function (PUF) key generation.
• To explore the use of noble metal electrodes for enhanced optical modulation and color perception capabilities.
• To demonstrate the application of this RRAM in reconfigurable, in-sensor color image cryptography.

Main Methods:

• Fabrication of 2D h-BN based optoelectronic RRAM with semitransparent Ag or Au top electrodes.
• Investigation of surface plasmon effects for light absorption and modulation of filament growth.
• Analysis of resistive switching characteristics under optical stimuli to understand photothermal and photogenerated hot electron effects.
• Demonstration of wavelength-selective response mimicking biological cone cells.

Main Results:

• Noble metal surface plasmons efficiently modulate nanoscale filament growth, impacting resistive switching.
• Optical stimuli impede filament aggregation and promote annihilation via photothermal effects and hot electrons.
• The RRAM array exhibits wavelength-dependent responses, enabling color perception.
• High-quality intrinsic randomness allows for consistent PUF key generation per exposure cycle.

Conclusions:

• Developed optoelectronic RRAM based on 2D h-BN with noble metal electrodes for in-sensor color image cryptography.
• Demonstrated simultaneous color image capture and PUF key generation for hardware-level security.
• Validated the potential for reconfigurable cryptography through wavelength-selective perception and intrinsic randomness.