Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide.

Yongjoo Jo1, Younji Kim1, Sanghyeon Kim1

  • 1Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.

Nano Letters
|May 29, 2024
PubMed
Summary

Researchers achieved magnetic memory switching without an external magnetic field using a single-phase material, SrRuO3. This breakthrough offers high spin-orbit torque efficiency and low power consumption for advanced spintronic devices.

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