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Updated: Jun 23, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology

Ik-Jyae Kim1, Jiwoung Choi1, Jang-Sik Lee1

  • 1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.

ACS Applied Materials & Interfaces
|June 20, 2024
PubMed

Keywords:
disturbanceferroelectric NANDferroelectric materialsferroelectric transistor arrayzirconium-doped hafnium oxides

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