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Simultaneous mapping of cathodoluminescence spectra and backscatter diffraction patterns in a scanning electron

Paul R Edwards1, G Naresh Kumar1,2, Jonathan J D McKendry3

  • 1Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, United Kingdom.

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Summary

We developed a new method for simultaneously acquiring electron backscatter diffraction and cathodoluminescence signals from semiconductor films. This technique allows for detailed strain analysis and light emission characterization in micro-LEDs.

Keywords:
CLEBSDcathodoluminescencehyperspectralmicroLEDstrainultraviolet

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Optoelectronics

Background:

  • Electron backscatter diffraction (EBSD) and cathodoluminescence (CL) are key scanning electron microscopy (SEM) techniques for semiconductor film characterization.
  • EBSD reveals crystalline material strain, while CL shows strain's effect on light emission.
  • Traditional methods face geometric conflicts, preventing simultaneous EBSD and CL data acquisition.

Purpose of the Study:

  • To present a novel method for simultaneous EBSD and CL signal acquisition.
  • To enable combined strain and light emission analysis in semiconductor materials.
  • To investigate strain fields and emission wavelength variations in deep-ultraviolet micro-LEDs.

Main Methods:

  • Developed a technique to collect CL signals through a transparent sample substrate during SEM.
  • Integrated EBSD and CL acquisition within a single scanning process.
  • Applied the combined technique to analyze strain and emission in deep-ultraviolet micro-LEDs.

Main Results:

  • Successfully achieved simultaneous EBSD and CL data collection from semiconductor samples.
  • Demonstrated the ability to map strain distribution and correlated emission wavelength variations.
  • Validated the technique's effectiveness on deep-ultraviolet micro-LEDs.

Conclusions:

  • The presented method overcomes geometric limitations for combined EBSD and CL analysis.
  • Simultaneous acquisition avoids image alignment issues and minimizes beam damage.
  • This approach offers a powerful tool for characterizing strain-dependent optoelectronic properties in semiconductor devices.