Simultaneous mapping of cathodoluminescence spectra and backscatter diffraction patterns in a scanning electron...

Area of Science:

• Materials Science
• Solid State Physics
• Optoelectronics

Background:

• Electron backscatter diffraction (EBSD) and cathodoluminescence (CL) are key scanning electron microscopy (SEM) techniques for semiconductor film characterization.
• EBSD reveals crystalline material strain, while CL shows strain's effect on light emission.
• Traditional methods face geometric conflicts, preventing simultaneous EBSD and CL data acquisition.

Purpose of the Study:

• To present a novel method for simultaneous EBSD and CL signal acquisition.
• To enable combined strain and light emission analysis in semiconductor materials.
• To investigate strain fields and emission wavelength variations in deep-ultraviolet micro-LEDs.

Main Methods:

• Developed a technique to collect CL signals through a transparent sample substrate during SEM.
• Integrated EBSD and CL acquisition within a single scanning process.
• Applied the combined technique to analyze strain and emission in deep-ultraviolet micro-LEDs.

Main Results:

• Successfully achieved simultaneous EBSD and CL data collection from semiconductor samples.
• Demonstrated the ability to map strain distribution and correlated emission wavelength variations.
• Validated the technique's effectiveness on deep-ultraviolet micro-LEDs.

Conclusions:

• The presented method overcomes geometric limitations for combined EBSD and CL analysis.
• Simultaneous acquisition avoids image alignment issues and minimizes beam damage.
• This approach offers a powerful tool for characterizing strain-dependent optoelectronic properties in semiconductor devices.