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Simulations of Anisotropic Monolayer GaSCl for p-Type Sub-10 nm High-Performance and Low-Power FETs

Hao Shi1, Siyu Yang1, Huipu Wang1

  • 1MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

ACS Applied Materials & Interfaces
|July 16, 2024
PubMed

Keywords:
2D materialMOSFETselectronic propertiesfirst-principles calculationtransport properties

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