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Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity
Maria Elias Pereira1, Jonas Deuermeier1, Rodrigo Martins1
1i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal.
ACS Applied Electronic Materials
|July 29, 2024
Summary
Hydrogen-doped indium-gallium-zinc oxide (H-doped IGZO) optoelectronic memristors enable visible light sensing for neuromorphic vision sensors. These devices mimic synaptic functions and show potential for intelligent self-processing displays.
Area of Science:
- Materials Science
- Neuroscience
- Electrical Engineering
Background:
- Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are key for neuromorphic vision sensors.
- Persistent photoconductivity (PPC) in AOS materials enables emulation of synaptic functions.
- Existing AOS devices struggle with visible light sensitivity, limiting color discrimination applications.
Purpose of the Study:
- To develop an optoelectronic memristor with visible light sensitivity for enhanced neuromorphic applications.
- To investigate the effect of hydrogen doping on indium-gallium-zinc oxide (IGZO) for optoelectronic properties.
- To demonstrate the emulation of spiking neural network (SNN) functionalities and synaptic plasticity.
Main Methods:
- Fabrication of a 4 μm² hydrogen-doped (H-doped) indium-gallium-zinc oxide (IGZO) optoelectronic memristor.
- Utilizing sputtering deposition with hydrogen gas incorporation.
- Characterization of device performance under various optical and electrical stimuli, including different wavelengths of light.
Main Results:
- The H-doped IGZO memristor successfully emulated SNN rules: short- to long-term memory transition (STM-LTM), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP).
- Visible light sensitivity was achieved for green and blue wavelengths due to hydrogen-induced subgap states.
- High light/dark ratios (179 at 365 nm, 93 at 405 nm, 12 at 505 nm) were demonstrated.
Conclusions:
- The H-doped IGZO optoelectronic memristor exhibits excellent visible light sensitivity and emulates crucial SNN functions.
- The device shows significant potential for integration into high-resolution IGZO-based displays for intelligent self-processing capabilities.
- This work overcomes limitations in visible light detection for AOS-based neuromorphic sensors.
