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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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Strong third-order nonlinearity in amorphous silicon carbide waveguides.

Yaoqin Lu, Xiaodong Shi, Adnan Ali Afridi

|August 2, 2024

Summary

This summary is machine-generated.

Amorphous silicon carbide (a-SiC) thin films show promise for photonic devices. Increasing the refractive index of a-SiC enhances its nonlinear properties, offering a wider bandgap alternative to silicon for on-chip optical applications.

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Published on: July 17, 2020

Area of Science:

Materials Science
Photonics
Nonlinear Optics

Background:

Silicon carbide (SiC) is a promising material for photonic integrated circuits due to its excellent optical properties.
Amorphous silicon carbide (a-SiC) thin films on insulator (a-SiCOI) are accessible for wafer-scale photonic applications.
a-SiC offers a wider bandgap than silicon, potentially reducing two-photon absorption.

Purpose of the Study:

To investigate the relationship between refractive index and nonlinear properties in a-SiC thin films.
To evaluate a-SiC as a material for high-performance on-chip optical applications.
To compare the nonlinear performance of a-SiC with silicon and crystalline SiC.

Main Methods:

Fabrication of three a-SiCOI samples with varying refractive indices using plasma-enhanced chemical vapor deposition.
Fabrication of optical waveguides on the a-SiCOI samples.
Characterization of nonlinear refractive index using four-wave mixing measurements.

Main Results:

An increase in the refractive index of a-SiC directly correlates with an enhanced nonlinear refractive index.
The nonlinear refractive index of a-SiC is comparable to that of silicon.
a-SiC exhibits a higher refractive index and stronger nonlinearity than crystalline SiC.

Conclusions:

Amorphous silicon carbide is a viable material for developing advanced photonic integrated circuits.
a-SiC offers a tunable platform with superior nonlinear optical performance and a wider bandgap compared to silicon.
This research paves the way for novel SiC-based photonic devices with minimized optical losses.