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Updated: Jun 12, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Gyeongpyo Kim1, Seoyoung Park1, Minsuk Koo2
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Oxygen plasma treatment significantly enhances Al/TaOX/Al resistive random-access memory (RRAM) devices for neuromorphic computing. Treated RRAM shows improved performance, durability, and synaptic weight tuning capabilities.
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