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Published on: June 28, 2016
Plasmon-Phonon Hybridization in Doped Semiconductors from First Principles
Jae-Mo Lihm1, Cheol-Hwan Park1
1Department of Physics and Astronomy, <a href="https://ror.org/04h9pn542">Seoul National University</a>, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea and Center for Theoretical Physics, <a href="https://ror.org/04h9pn542">Seoul National University</a>, Seoul 08826, Korea.
Abstract:
Although plasmons and phonons are the collective excitations that govern the low-energy physics of doped semiconductors, their nonadiabatic hybridization and mutual screening have not been studied from first principles. We achieve this goal by transforming the Dyson equation to the frequency-independent dynamical matrix of an equivalent damped oscillator. Calculations on doped GaAs and TiO_{2} agree well with available Raman data and await immediate experimental confirmation from infrared, neutron, electron-energy-loss, and angle-resolved photoemission spectroscopies.
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