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Bottom Electrode Modification Enables Efficient and Bright Silicon-Based Top-Emission Perovskite Light-Emitting
Lingfeng Zhou1, Minxing Yan1, Guangjie Luo1
1State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
Small (Weinheim an Der Bergstrasse, Germany)
|October 25, 2024
Summary
Researchers improved silicon-based green perovskite light-emitting diodes (PeLEDs) by replacing gold electrodes with silver and adding a dual-layer surface modification. This boosts efficiency and brightness for full-spectrum on-chip light sources.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Devices
Background:
- Perovskite integration with silicon platforms offers potential for efficient on-chip light sources and displays.
- Silicon-based green perovskite light-emitting diodes (PeLEDs) lag behind red and near-infrared counterparts in performance.
- Traditional gold electrodes in top-emission PeLEDs show poor green spectrum reflectivity.
Purpose of the Study:
- To enhance the performance of silicon-based green PeLEDs.
- To overcome the limitations of gold electrodes in green light emission.
- To achieve high efficiency and brightness comparable to other spectrum PeLEDs.
Main Methods:
- Replaced gold (Au) with silver (Ag) electrodes to improve green light reflectivity.
- Applied ultrathin molybdenum trioxide (MoO3) and self-assembled monolayers (SAMs) for surface modification.
- Investigated the effect of MoO3 and SAMs on interfacial energy barriers and defect formation.
Main Results:
- Silver electrodes significantly enhanced green light reflectivity compared to gold.
- The MoO3 layer effectively reduced the energy barrier for hole injection at the Ag/polymer interface.
- SAMs prevented interfacial defect formation, ensuring stable device performance.
- Achieved a peak external quantum efficiency of 18.2% and a maximum brightness of 81931 cd m-2.
Conclusions:
- The developed organic/inorganic dual-layer modification strategy successfully boosts Si-based green PeLED performance.
- This advancement enables Si-based PeLEDs to achieve full-spectrum output with high efficiency and brightness.
- The findings pave the way for high-performance, full-spectrum silicon-based optoelectronic devices.
