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Solvent Bonding for Fabrication of PMMA and COP Microfluidic Devices
Published on: January 17, 2017
Highly Robust, Pressureless Silver Sinter-Bonding Technology Using PMMA Combustion for Power Semiconductor
Moses Gu1, Hyunjin Nam2, Sehoon Park2
1Intelligent Semiconductor Engineering Department, Seoul National University of Science and Technology, 232, Gongneung-ro, Nowon-gu, Seoul 01811, Republic of Korea.
Abstract:
This study presents the development of a highly robust, pressureless, and void-free silver sinter-bonding technology for power semiconductor packaging. A bimodal silver paste containing silver nanoparticles and sub-micron particles was used, with polymethyl methacrylate (PMMA) as an additive to provide additional thermal energy during sintering. This enabled rapid sintering and the formation of a dense, void-free bonding joint. The effects of sintering temperature and PMMA content on shear strength and microstructure were systematically investigated. The results showed that the shear strength increased with rising sintering temperatures, achieving a maximum of 41 MPa at 300 °C, with minimal void formation due to enhanced particle necking facilitated by PMMA combustion. However, at 350 °C, the shear strength decreased to 35 MPa due to cracks and voids at the copper substrate-copper oxide interface caused by thermal expansion mismatch. The optimal PMMA content was found to be 5 wt.%, balancing sufficient thermal energy and void reduction. This pressureless sintering technology demonstrates significant potential for high-reliability applications in power semiconductor modules operating under high-temperature and high-stress conditions.

