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Updated: Jul 31, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
Design of a High-Performance Near-Infrared Scintillator through Metal-Atom Substitution in Metal Chalcogenide
Liangwei Yang1,2, Zhuolei Zhang1, Rensheng Wang1
1State Key Laboratory of Radiation Medicine and Protection, School for Radiological and Interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou 215123, China.
Abstract:
We report the synthesis and optical characterization of a series of metal chalcogenides, A3SiS4Te (A = Sr2+, Ba2+, Eu2+), highlighting the metal-atom substitution strategy for the discovery of a high-performance metal chalcogenide-based near-infrared (NIR) scintillator of Eu3SiS4Te. Eu3SiS4Te exhibits exceptionally broad NIR emission with a full width at half-maximum of 210 nm, the largest among all known Eu2+-based NIR emitters. Eu3SiS4Te has a high light yield of 41697 photons/MeV and excellent resistance to hygroscopicity. Additionally, Eu3SiS4Te boasts a decay time of 531.3 ns, which is merely a quarter of that of the current state-of-the-art NIR scintillators. As a proof of concept, the response to the 241Am radioactive source was successfully identified, underscoring its potential for γ-photon-counting applications.
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