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Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer.

Yi-Fan Jiang1, Jia-Min Tian1, Tong Li1

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

ACS Applied Materials & Interfaces
|November 29, 2024
PubMed
Summary

Replacing indium arsenide (InAs) native oxide with yttrium oxide (Y2O3) dielectric passivation significantly enhances nanowire (NW) field-effect transistor (FET) performance and stability.

Keywords:
InAs nanowiresY2O3 dielectricelectrical performancefield-effect transistorinterface qualityisolation layer

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Indium arsenide (InAs) nanowire (NW) field-effect transistors (FETs) are promising for next-generation integrated circuits due to excellent electrical properties.
  • The native oxide on InAs NWs is defective, hindering surface passivation and efficient isolation in gate stacks, unlike the Si/SiO2 system.

Purpose of the Study:

  • To investigate the use of stable yttrium oxide (Y2O3) as an isolation layer (IL) to replace the native oxide in InAs NW FETs.
  • To improve surface passivation, channel isolation, and overall electrical performance of InAs NW FETs.

Main Methods:

  • Fabrication of top-gate and double-gate InAs NW FETs with Y2O3 as the isolation layer (IL) and HfO2 as the high-k dielectric.
  • Electrical characterization including subthreshold swing (SS), on-off ratio, field-effect mobility (μFE), and drain-induced barrier lowering (DIBL).
  • Assessment of device stability after long-term air exposure and low-temperature measurements to evaluate interface quality.

Main Results:

  • Top-gate devices with Y2O3 IL exhibited superior performance: SS of 77 mV/dec, high on-off ratio, μFE of 1845 cm2/V·s, and low interface trap density (Dit) of 9.1 × 10^11 eV^-1 cm^-2.
  • Double-gate FETs achieved excellent gate control (DIBL down to 35 mV/V) and a record μFE of 2711 cm2/V·s.
  • Devices with Y2O3 IL demonstrated enhanced stability against air exposure and improved interface quality, as indicated by low-temperature measurements.

Conclusions:

  • Yttrium oxide (Y2O3) effectively passivates the InAs NW surface and serves as a superior isolation layer (IL) compared to native oxides.
  • Y2O3/HfO2 InAs NW FETs show significant potential for digital integrated circuits in future nodes.
  • The Y2O3 passivation strategy is valuable for advancing other III-V NW devices.