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Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect
Donguk Kim1, Dayeon Lee1, Wonjung Kim1
1School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.
ACS Applied Materials & Interfaces
|January 16, 2025
Summary
This study examines fast transient drain current (I_D) in Indium Gallium Zinc Oxide (IGZO) field-effect transistors (FETs). Device G, with a specific Ga composition, shows improved immunity to overshoot currents in short channels, enhancing reliability.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Fast transient drain current (I_D) in Indium Gallium Zinc Oxide (IGZO) field-effect transistors (FETs) can lead to device degradation.
- Overshoot currents are linked to electron trapping in the energy band during fast transients.
Purpose of the Study:
- To analyze the characteristics of fast transient drain current (I_D) in IGZO-based FETs with varying composition ratios.
- To investigate the impact of lateral electric field (E_lat) and channel length (L) on overshoot currents (ΔI_OS).
- To understand the role of Ga composition in mitigating short-channel effects on transient behavior.
Main Methods:
- Experimental analysis of IGZO-based FETs with different In:Ga:Zn ratios (Device O: 1:1:1, Device G: 0.307:0.39:0.303).
- Measurement of drain current (I_D) transients under varying lateral electric fields (E_lat) and channel lengths (L).
- Technology Computer-Aided Design (TCAD) simulations to model physical parameters (n_OS, E_ver, N_OT) influencing overshoot currents.
Main Results:
- Overshoot drain current difference (ΔI_OS) increases with lateral electric field (E_lat) for both devices.
- Device G exhibits less pronounced ΔI_OS increase with decreasing channel length (L) compared to Device O.
- Device G shows smaller ΔI_OS in short channels (L=0.5, 1 μm) but larger in long channels (L=5, 10 μm) than Device O.
- Lower oxygen vacancy concentration in Device G suppresses dopant diffusion, enhancing short-channel immunity.
Conclusions:
- Controlling the Ga composition ratio in IGZO is crucial for improving short-channel effects on fast-transient drain current (I_D).
- Device G demonstrates superior immunity to overshoot currents in short-channel regions, indicating potential for more reliable IGZO FET operations.
- The study provides insights into the physical mechanisms governing transient behavior and short-channel effects in IGZO FETs.
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