Intrinsic Solution to the Dilemma between High-Efficiency and External-Field-Free Spin-Orbit Torque Switching Based

Biao Wu1, Siyuan Jiang1, Di Wang1

  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, People's Republic of China.

Nano Letters
|January 22, 2025
PubMed
Summary

Spin-orbit torque (SOT) offers fast writing for magnetic random-access memories (MRAMs). Utilizing biaxial systems intrinsically solves the challenge of achieving high switching efficiency without external fields in SOT-MRAM devices.

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