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Published on: March 24, 2019
Intrinsic Solution to the Dilemma between High-Efficiency and External-Field-Free Spin-Orbit Torque Switching Based
Biao Wu1, Siyuan Jiang1, Di Wang1
1School of Microelectronics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
Spin-orbit torque (SOT) offers fast writing for magnetic random-access memories (MRAMs). Utilizing biaxial systems intrinsically solves the challenge of achieving high switching efficiency without external fields in SOT-MRAM devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Spin-orbit torque (SOT) is a promising technology for magnetic random-access memories (MRAMs) due to its speed and robustness.
- A key challenge in SOT devices is the incompatibility between achieving field-free switching and high switching efficiency.
Purpose of the Study:
- To propose and demonstrate a novel approach to intrinsically overcome the limitations in SOT devices.
- To enable high-efficiency and external-field-free switching in SOT-MRAMs.
Main Methods:
- Theoretical proposal of utilizing biaxial systems to address SOT switching challenges.
- Experimental demonstration of the proposed scheme in a MgO/Fe/W device.
Main Results:
- Biaxial systems intrinsically solve the dilemma between high switching efficiency and external-field-free operation in SOT.
- The intrinsic multistate storage capability of the biaxial device was shown to compensate for increased area requirements.
Conclusions:
- The proposed biaxial system approach offers a viable solution for advanced SOT-MRAM development.
- This work paves the way for overcoming critical challenges in SOT-based memory technologies.
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