Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

BJT Amplifiers01:14

BJT Amplifiers

329
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
329
MOSFET Amplifiers01:17

MOSFET Amplifiers

146
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
146
Small-Signal Analysis of BJT Amplifiers01:21

Small-Signal Analysis of BJT Amplifiers

945
Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
945
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

497
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
497
Cut-off Frequency of BJT01:17

Cut-off Frequency of BJT

621
Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
621
Maximum Power Transfer01:16

Maximum Power Transfer

223
Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
223

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Compartment-Specific Aberrant YAP Activation Impairs Endometrial Receptivity and Decidualization in Recurrent Implantation Failure and Recurrent Pregnancy Loss†.

Biology of reproduction·2026
Same author

Electrostatic regulation of solvation chemistry enables ampere-hour-scale high-energy lithium metal batteries.

Nature nanotechnology·2026
Same author

Spatial Transcriptomics Open a New Era of Pan-Cancer Analysis.

Cancer investigation·2026
Same author

<i>Brassica rapa</i> L. Polysaccharides Alleviate Cyclophosphamide-Induced Intestinal Mucosal Injury in Mice by Modulating Oxidative Stress, Immune Responses, and Gut Microbiota.

Microorganisms·2026
Same author

A Robust Metal-Organic Framework Derived Bioinspired Metal-Polyphenol Network Interface for Enhanced Sodium Storage.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Trait mindfulness reduces the generalization of conditioned fear: a preliminary pilot study.

BMC psychology·2026

Related Experiment Video

Updated: May 31, 2025

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

11.4K

An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness.

Bangjie Zheng1, Zhiqun Cheng1,2, Zhiwei Zhang1,3

  • 1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.

Micromachines
|January 25, 2025
PubMed
Summary

This study introduces an X-band high-power Gallium Nitride (GaN) MMIC power amplifier (PA). It achieves excellent in-band power flatness and high efficiency using load-line theory and advanced matching networks.

Keywords:
Class-JGaNMMICX-bandpower amplifier (PA)

More Related Videos

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.1K
Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

10.8K

Related Experiment Videos

Last Updated: May 31, 2025

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

11.4K
Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.1K
Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

10.8K

Area of Science:

  • Electrical Engineering
  • Solid-State Electronics
  • Microwave Engineering

Background:

  • Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) are crucial for high-power applications.
  • Achieving simultaneous high efficiency, output power, and power flatness in power amplifiers (PAs) remains a design challenge.

Purpose of the Study:

  • To design and validate an X-band high-power GaN MMIC power amplifier (PA).
  • To improve in-band power flatness and efficiency using load-line theory and optimized matching networks.

Main Methods:

  • Load-line theory was applied to analyze power variation trends in an extended continuous Class B/J (CCBJ) impedance space.
  • An L-C impedance matching network was designed to match the output impedance to a specific constant power contour within the CCBJ space.
  • An RC parallel structure was incorporated into the interstage matching network for gain maximization and stability.

Main Results:

  • The GaN MMIC PA achieved a saturated output power of 47-47.6 dBm.
  • In-band power fluctuations were minimized to within ± 0.3 dB.
  • The amplifier demonstrated a power gain of 27.0-27.8 dB and an efficiency of 40-45.5% across the X-band.

Conclusions:

  • The proposed CCBJ design approach, combined with optimized L-C and RC matching networks, effectively enhances in-band power flatness and overall performance of X-band GaN MMIC PAs.
  • The developed PA meets demanding specifications for high-power X-band applications, showcasing the effectiveness of the employed design methodologies.