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Interlayer Coherent Dipole-Dipole Coupling Facilitates Charge Transfer in Multilayer Transition Metal Dichalcogenide
Zi-Fan Hu1, Lei Wang1, Hai Wang1
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Abstract:
Inserting intermediate layers in transition metal dichalcogenide heterostructures (TMD HSs) has become an efficient approach to modulating interlayer charge transfer rates. However, it could not only modify the distance of charge transfer but also potentially alter the interlayer coupling strength within HSs, which would profoundly influence the charge transfer rate in the opposite direction. Here, to gain insight into the dual roles of inserted intermediate layers in multilayer TMD HSs, MoS2-nL WSe2-MoSe2 (n = 1-3) HSs were designed and systemically investigated. Different from the electron tunneling model following exponential behavior, we demonstrate that the coherent dipole-dipole coupling between 2L WSe2 and MoSe2 occurs, facilitating the averaged electron transfer rate (1/0.21 ps-1) from MoSe2 to MoS2. This is 3.7 times (an order of magnitude) faster than that of 1/0.77 ps-1 (1/2.08 ps-1) in the MoS2-1L WSe2-MoSe2 HS (MoS2-3L WSe2-MoSe2 HS), emphasizing its importance in multilayer TMD HS device design.
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