Related Experiment Video
Updated: May 7, 2026

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
Published on: April 12, 2018
Subtractive Microfluidics in CMOS
Wei-Yang Weng1, Alexander Di1, Xiang Zhang1
1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA.
Abstract:
This paper introduces a microfluidics platform embedded within a silicon chip implemented in CMOS technology. The platform utilizes a one-step wet etching method to create fluidic channels by selectively removing CMOS back-end-of-line (BEOL) routing metals. We term our technique "subtractive" microfluidics, to complement those fabricated with additive manufacturing. Three types of structures are presented in a TSMC 180-nm CMOS chip: (1) passive microfluidics in the form of a micro-mixer and a 1:64 splitter, (2) fluidic channels with embedded ion-sensitive field-effect transistors (ISFETs) and Hall sensors, and (3) integrated on-chip impedance-sensing readout circuits including voltage drivers and a fully differential transimpedance amplifier (TIA). Sensors and transistors are functional pre- and post-etching with minimal changes in performance. Our CMOS subtractive microfluidics technique enables tight integration of fluidics and electronics, paving the way for future small-size, high-throughput lab-on-chip (LOC) devices.
More Related Videos
09:58Computer Numerical Control Micromilling of a Microfluidic Acrylic Device with a Staggered Restriction for Magnetic Nanoparticle-Based Immunoassays
Published on: June 23, 2022
07:03Author Spotlight: Integrating Computational and Experimental Approaches in Precision Oncology
Published on: December 1, 2023
Related Concept Videos
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Small-Signal Analysis of MOSFET Amplifiers
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...