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Enhancing lithographic accuracy by mitigating overlay errors via mask-induced thermal and mechanical optimization.

Dinghai Rui1,2,3, Libin Zhang1,2,3, Yayi Wei1,2,3

  • 1EDA Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People's Republic of China.

Nanotechnology
|April 15, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel mask optimization method to reduce overlay errors in advanced lithography, significantly improving precision for nanoimprint lithography (NIL) and surface plasmon lithography (SPL). The technique achieves high compensation rates, ensuring greater accuracy in integrated circuit fabrication.

Keywords:
finite element method (FEM)lithographic accuracynanoimprint lithography (NIL)overlay compensationsurface plasmon lithography (SPL)

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Area of Science:

  • Materials Science and Engineering
  • Nanotechnology
  • Semiconductor Manufacturing

Background:

  • Shrinking technology nodes demand higher lithographic accuracy in integrated circuit fabrication.
  • Traditional overlay error compensation methods face limitations in emerging lithographic techniques.
  • Overlay errors are critical for achieving high-precision semiconductor manufacturing.

Purpose of the Study:

  • To propose and validate a mask-induced thermal and mechanical optimization approach for mitigating overlay errors.
  • To enhance lithographic precision in nanoimprint lithography (NIL) and surface plasmon lithography (SPL).
  • To develop a reliable solution for overlay error compensation in advanced lithography.

Main Methods:

  • Integration of stress application schemes with localized thermal effects for mask optimization.
  • Mathematical modeling utilizing moment balance assumptions and linear superposition for overlay error compensation.
  • Statistical analysis and optimization algorithms to identify 20 key compensation parameters.
  • Experimental validation and finite element method (FEM) simulations for model verification.

Main Results:

  • Achieved compensation effectiveness of 89.18% for random, 93.05% for linear, 64.75% for quadratic, and 53.89% for higher-order overlay errors.
  • Demonstrated average compensation of 91.98% in X and Y directions across 24 random tests, indicating strong stability.
  • FEM simulations confirmed residual overlay error compensation below 0.2 nm with a calculation-to-validation discrepancy under 0.9%.

Conclusions:

  • The proposed mask-induced thermal-mechanical optimization effectively mitigates overlay errors in NIL and SPL.
  • The validated model offers a reliable solution for overlay error compensation in advanced lithography.
  • Provides valuable insights for future research in EUV and DUV lithography and integrated circuit fabrication.