Related Experiment Video
Updated: Jun 13, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
High-Efficiency Silicon Solar Cells with Chemical and Field-Effect Passivation Using Novel 2PACz/MoOx Hole-Selective
Qianfeng Gao1,2,3,4, Jianghao Liu1,2,3,4, Zhiyuan Xu1,2,3,4
1Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China.
Abstract:
Dopant-free crystalline silicon (c-Si) solar cells face critical challenges in hole transport layer (HTL) design, where conventional molybdenum oxide (MoOx) contacts suffer from interface oxidation and insufficient electron blocking. While self-assembled monolayers (SAMs) demonstrate potential in organic photovoltaics, their application in silicon-based HTLs remains unexplored. In this study, a novel organic SAM (2PACz) is proposed, where phosphonic acid (PA) groups form strong coordination bonds with MoOx as HTL, aiming to improve cell performance via both chemical and field-effect passivation. The incorporation of 2PACz raises the work function of MoOx by 0.66 eV and significantly improves the minority carrier lifetime, which, in turn increases the built-in potential (Vbi) to 1.06 V. These improvements contribute to a boost in both open-circuit voltage (Voc) and short-circuit current (Jsc). Finally, the solar cell with 2PACz/MoOx-Au NPs-MoOx (MAM) stack achieves a Voc of 753.3 mV, a Jsc of 40.10 mA cm- 2, a fill factor (FF) of 79.12%, and a conversion efficiency (Eff) of 23.90%. The application of 2PACz in the HTL significantly enhances solar cell performance, offering a novel strategy for interface optimization in c-Si solar cells and other optoelectronic devices.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

