A Copper-Molybdenum Etchant with Wide Process Window, Long Bath Life and High Stability for Thin Film Transistor...

Conventional etchants for multi-metal/alloy stacked structures often suffer from nonuniform etching, residual layers, or undercutting, failing to meet high-generation production standards. This study presents a stable copper-molybdenum (Cu-Mo) etchant with extended bath life for thin film transistor liquid crystal display (TFT-LCD) applications, achieved through compositional optimization. Systematic investigations have been conducted on the effects of etching time, copper ion (Cu²⁺) loading (bath life) and storage time on the etch performance, alongside evaluations of sudden-eruption point and material compatibility. Results demonstrate that over-etching beyond the "detected endpoint" by 10% to 90% maintains critical dimension (CD) bias and taper angle of MoNiTi(MTD)/Cu/MTD three-layer and Cu/MTD two-layer within process specifications, as well as the difference between the CD bias of the three-layer and two-layer structures at the same over-etch time. The optimized formulation exhibits a 20% broader process window and 20% longer bath life compared to the process-of-record (POR) etchant. Shelf stability exceeds 15 days with minimal performance degradation, while maintaining compatibility with industrial equipment materials. These advancements address key challenges in high-precision etching for advanced TFT-LCD manufacturing, providing a scalable solution for next-generation display production.