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High-Performance Ga₂O₃ In-Memory DUV Photodetectors By Interface Charge Reservoir Design for Multifunctional

Xiaohu Hou^1,2, Chen Li¹, Chen Chen¹

¹School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.

Advanced Materials (Deerfield Beach, Fla.)

|June 5, 2025

Summary

This summary is machine-generated.

Researchers developed a novel in-memory photodetector using Gallium Oxide (Ga2O3) semiconductor. This device integrates memory and photodetection, offering ultra-fast speeds and exceptional UV sensitivity for advanced optoelectronics.

Keywords:

deep UV gallium oxide in‐memory photodetector near‐zero dark current wide bandgap

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Area of Science:

Optoelectronics and Semiconductor Devices
Materials Science
Photonics

Background:

High-performance detectors are crucial for optoelectronics innovation.
Existing detectors with only optoelectronic conversion lack multifunctionality.
Demand for integrated, multifunctional single devices is increasing.

Purpose of the Study:

To demonstrate a novel in-memory photodetector by integrating memory into detectors.
To leverage wide bandgap semiconductor Gallium Oxide (Ga2O3) for enhanced device performance.
To explore new device capabilities beyond traditional photodetection.

Main Methods:

Fabrication of an in-memory photodetector using Ga2O3.
Integration of memory characteristics by controlling channel carriers via an interface charge reservoir.
Utilizing dynamic control under illumination and electrical stimuli.

Main Results:

Achieved ultrahigh-speed programming/erasing operations (nanoseconds) with a high extinction ratio (10^9).
Demonstrated near-zero dark current, record responsivity (6.7 × 10^7 A/W), and high UV sensitivity.
Established the device as the most sensitive UV photodetector to date.

Conclusions:

The novel Ga2O3 in-memory photodetector offers extraordinary memory and photodetection performance.
The device shows potential for weak-light imaging enhancement, light information storage, and path recording.
This work opens new avenues for developing advanced, high-performance in-memory detectors.