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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Modulation Doping and Reduced Hysteresis in Monochalcogenide InSe/GaS Heterostructure 2D Field-Effect Transistors.

Julian Ignacio Deagueros1, Min Gao1, Alice Cai1

  • 1Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.

ACS Applied Materials & Interfaces
|June 6, 2025
PubMed
Summary
This summary is machine-generated.

We investigated charge transfer in 2D material heterostructures. Encapsulating Gallium Sulfide (GaS) with Indium Selenide (InSe) in field-effect transistors reduced hysteresis, improving device performance.

Keywords:
2D field-effect transistorscarrier densityfield-effect mobilityhysteresismodulation dopingon-currentthreshold voltagevan der Waals heterostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) material heterostructures enable novel electronic phases and high-performance devices.
  • Understanding charge transfer mechanisms in these atomically thin semiconductor heterostructures is crucial but remains incomplete.

Purpose of the Study:

  • To investigate charge transfer and hysteresis in InSe/GaS heterostructure field-effect transistors.
  • To identify the source of hysteresis and explore methods for its mitigation.

Main Methods:

  • Fabrication of InSe/GaS heterostructure field-effect transistors with varying metal contact configurations.
  • Electronic characterization including on-current measurements and time-dependent conductance decay.
  • Analysis of hysteresis and charge flow dynamics.

Main Results:

  • Increased hysteresis and decreased on-current were observed when both InSe and GaS layers contacted metal electrodes.
  • Time-dependent conductance decay indicated charge injection into GaS from metal contacts as the hysteresis source.
  • Encapsulating GaS with InSe effectively mitigated hysteresis.

Conclusions:

  • Charge flow into GaS from metal contacts is identified as the primary cause of hysteresis in InSe/GaS heterostructures.
  • InSe encapsulation offers a viable strategy to create nearly hysteresis-free 2D heterostructure devices.
  • Resultant devices achieved good field-effect mobility and n-type modulation doping, demonstrating potential for advanced electronic applications.