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Micro-LED Microdisplays Driven by Carbon Nanotube Active-Matrix Backplanes.

Yi Li1,2, Yan Guo3, Jin Li1

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China.

ACS Nano
|June 13, 2025
PubMed
Summary

Carbon nanotube (CNT) thin-film transistors (TFTs) enable advanced active-matrix (AM) micro-light-emitting-diode (μLED) microdisplays. This breakthrough offers high resolution and performance for next-generation displays, overcoming limitations of current technologies.

Keywords:
carbon nanotubes (CNTs)dielectric and passivation layersmicro-LED (μLED) microdisplaysthin-film transistors (TFTs)two transistor one capacitor (2T1C) pixel driving circuit

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Display Technology

Background:

  • Micro-light-emitting-diode (μLED) displays promise revolutionary advancements in flat-panel display (FPD) technology, offering superior brightness, contrast, efficiency, and resolution.
  • High pixel-per-inch (PPI) μLED microdisplays require advanced thin-film transistor (TFT) backplanes, but current solutions like silicon CMOS, LTPS, and metal oxides face limitations in scalability, performance, and transparency.
  • Two-dimensional transition metal dichalcogenides (TMDs) show potential but have been hindered by complex integration and scalability issues, limiting them to semiactive-matrix demonstrations.

Purpose of the Study:

  • To develop and demonstrate an optimized carbon nanotube (CNT) thin-film transistor (TFT) backplane for active-matrix (AM) μLED microdisplays.
  • To overcome the limitations of existing backplane technologies for high-PPI μLED applications.
  • To establish CNT TFTs as a viable and scalable solution for next-generation μLED microdisplays.

Main Methods:

  • Fabrication of optimized CNT TFTs utilizing an Al2O3/SiO2 gate dielectric stack and Y2O3/SiO2/polyimide passivation layers.
  • Characterization of CNT TFT performance, including driving current and mobility, at varying channel lengths (Lch).
  • Development of a heterogeneous integration process using flip-chip eutectic bonding for assembling μLED arrays onto CNT TFT backplanes.
  • Design of CNT TFT-based 2T1C pixel circuits and peripheral control circuits supporting PAM and PWM modulation.

Main Results:

  • Optimized CNT TFTs with Lch = 3 μm achieved a driving current of ~10 μA/μm and mobility of ~27 cm²/(V·s).
  • Scaling Lch to 0.5 μm significantly enhanced performance, yielding a driving current of ~80 μA/μm and mobility of ~40 cm²/(V·s), surpassing previous CNT TFTs for AM displays.
  • The heterogeneous integration process achieved ~100% yield for μLED array assembly onto CNT TFT backplanes.
  • A 32 × 32-pixel AM-μLED prototype microdisplay with 357 PPI was successfully demonstrated, capable of dynamic image and video display.

Conclusions:

  • The developed CNT TFTs provide robust driving capabilities essential for high-PPI AM-μLED microdisplays, enabling resolutions up to 3400 PPI.
  • The heterogeneous integration method ensures reliable assembly of μLEDs onto CNT TFT backplanes.
  • CNT TFTs represent a promising, scalable solution for advanced μLED microdisplays, paving the way for next-generation AR/VR devices.