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Updated: Sep 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Impact of Reset Pulse Width on Gradual Conductance Programming in Al2O3/TiOx-Based RRAM

Hyeonseong Lim1, Wonbo Shim2, Tae-Hyeon Kim1

  • 1Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea.

Micromachines
|June 27, 2025
PubMed
Summary

Shortening the reset pulse width in multilevel resistive random access memory (RRAM) significantly improves programming linearity and reduces device variation. This optimization enables more reliable and precise multilevel operation in Al2O3/TiO x-based RRAM devices.

Keywords:
incremental step pulse programming (ISPP)resistive random access memory (RRAM)resistive switching

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