Scanning Electron Microscopy
Preparation of Samples for Electron Microscopy
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Updated: May 7, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Umberto Amato1, Anestis Antoniadis1, Italia De Feis2
1Istituto di Scienze Applicate e Sistemi Intelligenti, National Research Council of Italy, 80131 Napoli, Italy.
Optimizing semiconductor manufacturing involves predicting final yield from wafer defects. This study identifies key inspection layers and develops a Gradient Boosting model to predict electrical failures, improving semiconductor testing efficiency.
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