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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Detecting Important Features and Predicting Yield from Defects Detected by SEM in Semiconductor Production.

Umberto Amato1, Anestis Antoniadis1, Italia De Feis2

  • 1Istituto di Scienze Applicate e Sistemi Intelligenti, National Research Council of Italy, 80131 Napoli, Italy.

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|July 12, 2025
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Summary
This summary is machine-generated.

Optimizing semiconductor manufacturing involves predicting final yield from wafer defects. This study identifies key inspection layers and develops a Gradient Boosting model to predict electrical failures, improving semiconductor testing efficiency.

Keywords:
Gradient BoostingOdds RatioScanning Electron Microscopepredictive maintenancesemiconductorsyield

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Area of Science:

  • Semiconductor Manufacturing
  • Materials Science
  • Electrical Engineering

Background:

  • Optimizing semiconductor production requires accurate yield prediction based on in-process defect detection.
  • Scanning Electron Microscopy (SEM) is crucial for identifying wafer defects during manufacturing.

Purpose of the Study:

  • To identify optimal semiconductor layers for Scanning Electron Microscope (SEM) inspection.
  • To develop a predictive model for semiconductor electrical failures using detected defects.

Main Methods:

  • Odds Ratio analysis to rank inspection layers based on their predictive power for final yield.
  • Gradient Boosting regression/classification model to predict electrical failures from SEM-detected defects.
  • Validation of both models on two independent semiconductor datasets.

Main Results:

  • A ranked list of critical semiconductor layers for SEM inspection was identified, enabling focused process control.
  • A Gradient Boosting model successfully predicted electrical failures from wafer defects, confirming Odds Ratio findings.
  • Both developed models effectively handled data lacunarity, enhancing prediction accuracy.

Conclusions:

  • Targeted SEM inspection on identified key layers significantly improves semiconductor yield prediction.
  • The developed Gradient Boosting model offers a robust method for predicting semiconductor failures, optimizing the production process.
  • This research provides actionable insights for enhancing semiconductor quality control and reducing manufacturing costs.