Electron Microscope Tomography and Single-particle Reconstruction
Scanning Electron Microscopy
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Updated: Sep 16, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Nicolò M Della Ventura1, James D Lamb1, William C Lenthe2
1Materials Department, University of California, Santa Barbara, Santa Barbara, CA 93106, USA.
A new method, orientation-adaptive virtual apertures (OAVA), visualizes individual dislocations in materials using electron backscatter diffraction (EBSD) data. This technique enhances defect characterization by adapting to local crystal orientation for improved contrast and automated analysis.
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