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Related Concept Videos

Types of Radioactivity03:23

Types of Radioactivity

The most common types of radioactivity are α decay, β decay, γ decay, neutron emission, and electron capture.
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Nuclear Stability

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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
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Burst Nucleation in Area-Selective Atomic Layer Deposition.

Chun Li1,2, Jiaxun Yao2, Jiayi Xu2

  • 1Harbin Institute of Technology, Harbin 150080, China.

ACS Applied Materials & Interfaces
|July 15, 2025
PubMed
Summary
This summary is machine-generated.

We discovered a burst nucleation phenomenon in area-selective atomic layer deposition (AS-ALD) using perfluoroalkyl self-assembled monolayers (SAMs). This method allows for easy removal of deposited material from non-target areas, significantly improving AS-ALD selectivity.

Keywords:
area-selective atomic layer depositionbottom-up fabricationburst nucleationperfluoroalkyl SAMsself-assembled monolayer

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Area-selective atomic layer deposition (AS-ALD) is crucial for fabricating advanced microelectronic devices.
  • Achieving high selectivity in AS-ALD relies on controlling nucleation behavior on targeted and non-targeted surfaces.
  • Current methods often struggle with complete removal of material from non-target areas, limiting overall process efficiency.

Purpose of the Study:

  • To investigate a novel nucleation control strategy for enhancing AS-ALD selectivity.
  • To explore the phenomenon of burst nucleation on perfluoroalkyl self-assembled monolayer (SAM)-treated surfaces.
  • To demonstrate the effectiveness of this strategy for various materials and substrates.

Main Methods:

  • Utilized perfluoroalkyl self-assembled monolayers (SAMs) to modify surface properties for AS-ALD.
  • Investigated nucleation behavior by varying SAM chain length, ALD precursor, and temperature.
  • Quantified selectivity using atomic layer deposition (ALD) of Al2O3 on Cu/SiO2 substrates and characterized particle adhesion.

Main Results:

  • Observed a 'burst nucleation' phenomenon on perfluoroalkyl SAM-treated surfaces, leading to discontinuous and weakly adhered particles on non-targeted regions.
  • Demonstrated that these weakly adhered particles can be easily removed by gentle wiping without damaging the ALD film on targeted areas.
  • Achieved 99.9% selectivity for Al2O3 ALD on Cu/SiO2 after 30 cycles, a significant improvement over conventional alkyl SAMs (52.2% selectivity).

Conclusions:

  • Burst nucleation on perfluoroalkyl SAMs provides an effective strategy for controlling AS-ALD selectivity.
  • This approach enables facile post-treatment removal of material from non-target areas, enhancing fabrication precision.
  • The burst nucleation strategy is broadly applicable to various oxide and polymer materials for advanced AS-ALD applications.