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A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing
Jyi-Tsong Lin1, Ruei-Cheng Tu2
1Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O.C.. jtlin@ee.nsysu.edu.tw.
Scientific Reports
|August 2, 2025
Summary
We developed a novel Control Source and Control Gate insulated Tunnel Field-Effect Transistor (CSCG-iTFET) for steeper subthreshold swing (SS) and high ON-state current. This device structure minimizes leakage current and thermal budget using Schottky contacts.
Area of Science:
- Semiconductor device physics
- Advanced transistor technology
- Materials science for electronics
Background:
- Tunnel Field-Effect Transistors (TFETs) offer potential for low-power electronics due to their steeper subthreshold swing (SS) compared to conventional MOSFETs.
- Achieving a steep SS while maintaining high ON-state current (ION) and low OFF-state current (IOFF) remains a significant challenge in TFET research.
- Existing TFET structures often face limitations in performance due to doping complexities and leakage pathways.
Purpose of the Study:
- To propose and investigate a novel Control Source and Control Gate structured insulated Tunnel Field-Effect Transistor (CSCG-iTFET).
- To achieve an unprecedentedly steep subthreshold swing (SS) and maintain a high ON-state current (ION).
- To reduce leakage current and thermal budget by employing Schottky contacts at the source without doping.
Main Methods:
- Device performance comparison of four different structures: conventional Double Gate TFET with Control Gate, iTFET with Control Gate, iTFET with Charge Enhancement Layer and Control Gate, and the proposed CSCG-iTFET.
- Utilizing Sentaurus TCAD for simulation studies with calibrated models and referenced processes.
- Investigating the enhancement of the accumulation layer through the Control Source's voltage modulation capability.
Main Results:
- The proposed CSCG-iTFET demonstrated an average subthreshold swing (SSAVG) of 9.69 mV/Dec and a minimum subthreshold swing (SSMIN) of 1.72 mV/Dec.
- Achieved an ON-state current (ION) of 2.95 × 10-7 A/µm at VD = 0.2 V.
- Obtained a high ON/OFF current ratio (ION/IOFF) of 3.84 × 109.
Conclusions:
- The CSCG-iTFET structure effectively achieves a significantly steeper subthreshold swing while maintaining high ON-state current.
- The use of Schottky contacts without doping successfully reduces leakage current and thermal budget.
- Further performance improvements are anticipated with optimized fabrication processes, highlighting the potential of this novel device architecture.
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