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Scientific Reports|August 2, 2025
A novel ultra-steep subthreshold swing iTFET with control gate and control source biasingJyi-Tsong Lin, Ruei-Cheng TuNanotechnology|September 14, 2023
Bilateral sidewall engineering Si1-GeiTFET for low power display applicationJyi-Tsong Lin, Chun-Ju ChuDiscover Nano|August 5, 2023
Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulationJyi-Tsong Lin, Yen-Chen ChangNanotechnology|January 11, 2024
Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applicationsJyi-Tsong Lin, Ruei-Kai YangDiscover Nano|July 2, 2024
Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower powerJyi-Tsong Lin, Chia-Yo KuoDiscover Nano|September 3, 2024
FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA designJyi-Tsong Lin, Wei-Heng TaiDiscover Nano|July 28, 2023
A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvementJyi-Tsong Lin, Shao-Cheng WengDiscover Nano|July 6, 2024
Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOSJyi-Tsong Lin, Pei-Zhang Xie, Wei-Han LeeDiscover Nano|September 29, 2023
Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocketJyi-Tsong Lin, Kuan-Pin Lin, Kai-Ming ChengPageof 1