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Related Experiment Video

Updated: Sep 12, 2025

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Study on Next-Generation EUV Lithography Technology: Hyper NA, the Highest Potential for Practical Implementation.

Inhwan Lee1,2, Joern-Holger Franke2, Vicky Philipsen2

  • 1Department of Chemistry, Faculty of Science, KU Leuven, Leuven 3001, Belgium.

ACS Applied Materials & Interfaces
|August 11, 2025
PubMed
Summary
This summary is machine-generated.

Future semiconductor scaling requires advanced lithography. This study explores reducing wavelength or increasing numerical aperture (NA) beyond current high-NA Extreme Ultraviolet (EUV) systems to enhance resolution for next-generation devices.

Keywords:
EUV lithographySRG (subresolution grating)best focus shiftbeyond EUVdepth of focushyper NAmask 3D effect

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Area of Science:

  • Semiconductor manufacturing
  • Advanced lithography techniques
  • Optical physics

Background:

  • Device scaling necessitates improved lithographic resolution.
  • Current Extreme Ultraviolet (EUV) lithography utilizes 0.33 NA, with 0.55 NA systems in development.
  • Further resolution enhancement is critical for future semiconductor nodes.

Purpose of the Study:

  • To evaluate pathways for extending lithographic resolution beyond current high-NA EUV systems.
  • To analyze the technical challenges and opportunities of reducing EUV wavelength or increasing NA.
  • To assess the feasibility and impact on imaging performance for future scaling.

Main Methods:

  • Comparative analysis of two primary scaling approaches: wavelength reduction (<13.5 nm) and numerical aperture increase (NA > 0.55).
  • Discussion of technical hurdles and potential advancements for each method.
  • Evaluation of imaging performance implications.

Main Results:

  • Both wavelength reduction and NA increase offer viable routes for further lithographic scaling.
  • Each approach presents distinct technical challenges and opportunities.
  • The feasibility and impact on imaging performance vary between the two methods.

Conclusions:

  • Continued device scaling relies on advancements in lithography, specifically beyond 0.55 NA EUV.
  • Exploring sub-13.5 nm wavelengths and NA > 0.55 are key strategies.
  • Careful consideration of technical challenges is essential for successful implementation.