Embeddable NbO₂-Based Modulator with Carrier Generation and Direct Digital Modulation for Wireless Internet of Things

Area of Science:

• Electrical Engineering
• Materials Science
• Computer Engineering

Background:

• Wireless Internet of Things (WIoT) demands efficient signal modulation hardware.
• Traditional modulation schemes face hardware cost and power consumption challenges due to digital-analog separation.

Purpose of the Study:

• To develop an embeddable Niobium Dioxide (NbO2)-based Frequency Shift Keying (FSK) modulator.
• To integrate carrier generation and digital modulation for direct binary-to-frequency conversion.
• To enhance bit-rate efficiency using NbO2-based Multi-FSK (NMFSK).

Main Methods:

• Integration of a low-voltage NbO2 oscillator with a 28 nm MOSFET modulation unit.
• Implementation of NMFSK by paralleling MOSFETs with varied W/L ratios for sequential assignment based on bit weights.
• Performance evaluation using 4FSK modulation of consecutive letters.

Main Results:

• Successful development of an embeddable NbO2-based FSK modulator.
• Demonstration of direct conversion of binary signals into distinct oscillation frequency bands.
• Achieved smooth frequency transitions in oscillation sequences using NMFSK, suitable for continuous tasks.

Conclusions:

• The developed NMFSK modulator offers a promising hardware solution for embeddable modulation units.
• This technology promotes advancements in wireless transmission for Internet of Things (IoT) applications.
• The integrated approach reduces hardware complexity, cost, and power consumption.