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Updated: Jan 10, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Gapless Single-Spin Qubit
Maximilian Rimbach-Russ1, Valentin John1, Barnaby van Straaten1
1Delft University of Technology, QuTech, and Kavli Institute of Nanoscience, Delft, The Netherlands.
Abstract:
All-electrical baseband control of qubits facilitates scaling up quantum processors by removing issues of crosstalk and heat generation. In semiconductor quantum dots, this is enabled by multispin qubit encodings, such as the exchange-only qubit. However, their performance is limited by unavoidable leakage states that are energetically close to the computational subspace. In this Letter, we introduce an alternative, scalable spin qubit architecture that leverages strong spin-orbit interactions of hole nanostructures for baseband qubit operations while completely eliminating leakage channels and reducing the overall gate overhead. This encoding is intrinsically robust to local variability in hole spin properties and operates with two degenerate states, removing the need for precise calibration and mitigating heat generation from fast signal sources. Finally, our architecture is fully compatible with current technology, utilizing the same initialization, readout, and multiqubit protocols of state-of-the-art spin-1/2 systems. By addressing critical scalability challenges, our design offers a robust and scalable pathway for semiconductor spin qubit technologies.
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